본문 시작
-
한희성 교수
- 직책 조교수
- 전공분야 스핀트로닉스, 소자물리
- 연구실 공과대학 시스템관 516호
-
연락처
Tel :
043-841-5386
E-mail hs.han@ut.ac.kr - 홈페이지 https://sites.google.com/view/spin-heesunghan
▶ 학력
UNIST 신소재공학과 졸업 (공학박사)
UNIST 신소재공학과 졸업 (공학석사)
UNIST 기계신소재공학부 졸업(전공: 신소재공학, 소자물리) (공학사)
▶ 경력
2023.8 – 현재 : 한국교통대학교 반도체신소재공학과 조교수
2020.12 – 2023.8 : Lawrence Berkeley National Laboratory 박사후연구원
2020.3 – 2020.11 : UNIST 신소재공학과 박사후연구원
▶ 연구 업적
[학술논문]
- Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy, Advanced Materials 35, 9, 2370064 (2023)
- Tuning of oscillation modes by controlling dimensionality of spin structures, NPG Asia Materials 14, 91 (2022)
- Stochasticity in the Switching of Nanodisks for Probabilistic Computing, ACS Applied Nano Materials 4, 9, 9912–9918 (2021)
- Magnetic skyrmion diode: Unidirectional skyrmion motion via symmetry breaking of potential energy barriers, Physical Review B 104, L060408 (2021).
- Topology-dependent stability of vortex-antivortex structures, Applied Physics Letter 118, 212407 (2021)
- Thermal generation, manipulation and thermoelectric detection of skyrmions Nature Electronics 3, 672-679 (2020).
- Direct demonstration of topological stability of magnetic skyrmions via topology manipulation, ACS Nano 14, 3251-3258 (2020)
- Creation and annihilation of topological meron pairs in in-plane magnetized films, Nature Communications 10, 5603 (2019)
- Dynamics of the Bloch point in an asymmetric permalloy disk, Nature Communications 10, 593 (2019)
- Spin-orbit torque-driven skyrmion dynamics revealed by time-resolved X-ray microscopy, Nature Communications 8, 15573 (2017)
- Simultaneous control of magnetic topologies for reconfigurable vortex arrays, NPG Asia Materials 9, 348 (2017) 외 다수
[학술대회 발표]
- Topological charge-dependent motion of the emergent magnetic monopole in soft magnetic elements, APS March Meeting 2023, United States (2023)
- Study on the topology-relevant stability of vortex-antivortex pair in a permalloy element, 15th Joint MMM-Intermag Conference, United States (2022) 외 다수
[특허]
- Magnetic domain drawing apparatus, Patent Number: 11-331932, United States (2022)
- Skyrmion diode and method of manufacturing the same, Patent Number: 11024726, United States (2021) 외 다수
[연구실 사이트]
https://sites.google.com/view/spin-heesunghan