▶학력
광운대학교 전자공학과 (공학박사)
광운대학교 전자공학과 (공학석사)
광운대학교 전자공학과 (공학사)

▶경력
2021.03 – 현재: 한국교통대학교 (조교수)
2014.10 – 2021.01: Georgia Institute of Technolgy (Research Engineer II)

▶연구업적
국제학술논문

[1] C. D. Cheon, M.-K. Cho, S. G. Rao, A. S. Cardoso, J. D. Connor, and J. D. Cressler, “A New Wideband, Low Insertion Loss,

  igh Linearity SiGe RF Switch,” IEEE Microwave and Wireless Components Letters, vol. 30, no. 10, pp. 985-988, Nov. 2020.
[2] M. A. R. Sarker, A. P. Omprakash, M.-K. Cho, J. D. Cressler, and I. Song, “Investigation of fT-Doubler Technique to Improve

  RF Performance of Inverse-Mode SiGe HBTs,” IEEE Microwave and Wireless Components Letters, vol. 30, no. 9, pp. 873-875, Sept. 2020.
[3] M.-K. Cho, I. Song, and J. D. Cressler, “A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable

  Phased Arrays with Controllable Beam Width,” IEEE Access, vol. 8, pp. 2578-2589, Jan. 2020.
[4] M.-K Cho, I. Song, Z. E. Fleetwood, A. Khachatrian, J. H. Warner, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler,

  “Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation,” IEEE

  Transactions on Nuclear Science, vol. 66, no. 1, pp. 240-247, Jan. 2019.
[5] I. Song, A. S. Cardoso, H. Ying, M.-K. Cho, J. D. Cressler, “Cryogenic Characterization of RF Low-Noise Amplifiers

  Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications,” IEEE Transactions on Device and Materials

  Reliability, vol. 18, no. 4, pp. 613-619, Dec. 2018.
[6] Y Gong, M.-K. Cho, I. Song, and J. D Cressler, “A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized

  Common-Emitter Differential Pair,” IEEE Microwave and Wireless Components Letters, vol. 28, no. 8, pp. 717-719, Aug. 2018.
[7] J. Kim, M.-K. Cho, and J.-G. Kim, “A multimode phase shifter for S­band phased array antenna,” Microwave and

  Optical Technology Letters, vol. 60, no. 8, pp. 1921-1924, Aug. 2018.
[8] M.-K. Cho, I. Song, and J. D. Cressler, “A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With

  Bandwidth Tuning and Equalization,” IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 8,

  pp. 3866-3876, Aug. 2018.
[9] I. Song, M.-K. Cho, and J. D. Cressler, “Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With

  Minimized Amplitude and Phase Variations,” IEEE Journal of Solid-State Circuits, vol. 53, no. 8, pp. 2202-2213, Aug. 2018.
[10] Z. E. Fleetwood, A. Ildefonso, G. N. Tzintzarov, B. Wier, U. Raghunathan, M.-K. Cho, I. Song, M. T. Wachter, D. Nergui,

  A. Khachatrian, J. H. Warner, P. McMarr, H. Hughes, E. Zhang, D. McMorrow, P. Paki, A. Joseph, V. Jain, and J. D. Cressler,

  “SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients,” IEEE Transactions

  on Nuclear Science, vol. 65, no. 1, pp. 399-406, Jan. 2018.
[11]I. Song, M.-K. Cho, Z. E. Fleetwood, Y, Gong, S, Pavlidis, S. P. Buchner, D. McMorrow, P. Paki, M. Kaynak, and J. D. Cressler,

  “p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform,”

  IEEE Transactions on Nuclear Science, vol. 65, no. 1, pp. 391-398, Jan. 2018.
[12] M.-K. Cho, I. Song, S, Pavlidis, Z. E. Fleetwood, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler, “An Electrostatic

  Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology,”

  IEEE Transactions on Nuclear Science, vol. 65, no. 1, pp. 426-431, Jan. 2018.
[13] I. Song, M.-K. Cho, M. A. Oakley, A. Ildefonso, I. Ju, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler, “On the

  Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients,” IEEE Transactions

  on Nuclear Science, vol. 64, no. 5, pp. 1142-1150, May. 2017.
[14] S. Pavlidis, G. Alexopoulos, A. Ç. Ulusoy, M.-K. Cho, and J. Papapolymerou, “Encapsulated Organic Package Technology

  for Wideband Integration of Heterogeneous MMICs,” IEEE Transactions on Microwave Theory and Techniques, vol. 65,

  no. 2, pp. 438-448, Feb. 2017.
[15] I. Song, M.-K. Cho, N. E. Lourenco, Z. E. Fleetwood, S. Jung, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow,

  P. Paki, and J. D. Cressler, “The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the

  Mitigation of Single-Event Transients,” IEEE Transactions on Nuclear Science, vol. 64, no. 1, pp. 359-366, Jan. 2017.
[16] I. Song, M.-K. Cho, J.-G. Kim, and J. D. Cressler, “A SiGe-BiCMOS Wideband (2–22 GHz) Active Power Divider/Combiner

  Circuit Supporting Bidirectional Operation,” IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 12,

  pp. 4676-4684, Dec. 2016.
[17] I. Song, A. Ç. Ulusoy, M. A. Oakley, I. Ju, M.-K. Cho, and J. D. Cressler, “Inverse class­FX­band SiGe HBT power amplifier

  with 44% PAE and 24.5 dBm peak output power,” Microwave and Optical Technology Letters, vol. 58, no. 12, pp. 2868-2871,

  Dec. 2016.
[18] M.-K. Cho, I. Song, I. Ju, and J. D. Cressler, “A Compact, Active SiGe Power Divider With Multi-Octave Bandwidth,” IEEE

  Microwave and Wireless Components Letters, vol. 26, no. 11, pp. 945-947, Nov. 2016.
[19] I. Ju, M.-K. Cho, I. Song, and J. D. Cressler, “A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner

  Using Symmetric Inductors with Embedded Capacitors,” IEEE Microwave and Wireless Components Letters, vol. 26, no. 8,

  pp. 595-597, Aug. 2016.
[20] I. Song, U. S. Raghunathan, N. E. Lourenco, Z. E. Fleetwood, M. A. Oakley, S. Jung, M.-K. Cho, N. J.-H. Roche, A. Khachatrian,

  J. H. Warner, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler, “An Investigation of the Use of Inverse-Mode SiGe HBTs as

  Switching Pairs for SET-Mitigated RF Mixers,” IEEE Transactions on Nuclear Science, vol. 63, no. 2, pp. 1099-1108, Apr. 2016.
[21] M.-K. Cho, I. Song, J.-G. Kim, and J. D. Cressler, “An active bi-directional SiGe DPDT switch with multi-octave bandwidth,”

  IEEE Microwave and Wireless Components Letters, vol. 26, no. 4, pp. 279-281, Apr. 2016.
[22] I. Song, S. Jung, N. E. Lourenco, U. S. Raghunathan, Z. E. Fleetwood, M.-K. Cho, N. J.-H. Roche, A. Khachatrian, J. H.

  Warner, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler, “Optimization of SiGe HBT RF Switches for Single-Event

  Transient Mitigation,” IEEE Transactions on Nuclear Science, vol. 62, no. 6, pp. 3057-3063, Dec. 2015.
[23] I. Song, M.-K. Cho, S. Jung, I. Ju, and J. D. Cressler, “Advantages of utilizing through­silicon­vias in SiGe HBT RF low­noise

  amplifier design,” Microwave and Optical Technology Letters, vol. 62, no. 6, pp. 3057-3063, Nov. 2015.
[24] M.-K. Cho, J.-G. Kim, and D. Baek, “A switchless CMOS bi-directional distributed gain amplifier with multi-octave bandwidth,”

  IEEE Microwave and Wireless Components Letters, vol. 23, no. 11, pp. 611–613, Nov. 2013.
[25] M.-K. Cho, D. Baek, and J.-G. Kim, “A Wideband CMOS Phase Shifter with a Phase Tuning Bit for Ku-Band Mobile Satellite

  Communication,” Microwave and Optical Technology Letters, vol. 55, no. 9, pp. 2120-2124, Sep. 2013.
[26] M.-K. Cho, D. Baek, and J.-G. Kim, “A Broadband Digital Step Attenuator with Low Phase Error and Low Insertion Loss in

  0.18mm SOI CMOS Technology,” ETRI Journal, vol. 35, no. 4, pp. 638-643, Aug. 2013.
[27] J. Y. Choi, M.-K. Cho, D. Baek, and J.-G. Kim, “A 5-20 GHz 5-BIT True Time Delay Circuit in 0.18mm CMOS Technology,”

  Journal of Semiconductor Technology and Science, vol. 13, no. 3, pp. 193-197, Jun. 2013.
[28] M.-K. Cho, D. Baek, and J.-G. Kim, “DC-20 GHz 5-BIT CMOS digital step attenuator with low insertion loss and phase error,”

  Microwave and Optical Technology Letters, vol. 55, no. 4, pp. 762-764, Apr. 2013.
[29] M.-K. Cho, D. Baek, and J.-G. Kim, “Compact X-band CMOS bidirectional gain amplifier without T/R switches,” Electronics

  Letters, vol. 49, no. 1, pp. 66-68. Jan. 2013.
[30] M.-K. Cho, D. Baek, and J.-G. Kim, “An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18mm SOI Technology,” IEEE

  Microwave and Wireless Components Letters, vol. 22, no. 12, pp. 648-650. Dec. 2012.
[31] H. J. Yoo, M.-K. Cho, J.-G. Kim, and Y. S. Eo, “Dual­band applicable CMOS PA with a switched inductor for 802.16 e WiMAX

  application,” Microwave and Optical Technology Letters, vol. 53, no. 12, pp. 2799-2802, Dec. 2011.

[국제학회 (Since 2019 ~)]

[1] S. Lee, I. Ju, A. Moradinia, M.-K. Cho, E. Gebara, H. Gu, C. Nicholls, and J. D. Cressler “A 2–24 GHz SiGe HBT Cascode

  Non-uniform Distributed Power Amplifier Using A Compact, Wideband Two-Section Lumped Element Output Impedance

  Transformer,” in IEEE MTT-S Int. Microwave Symp. Dig., 2021 (Accepted).
[2] S. Lee, I. Ju, Y. Gong, A. Cardoso, J. Connor, M.-K. Cho, and J. D. Cressler, “Design of an 18？50 GHz SiGe HBT Cascode

  Non-uniform Distributed Power Amplifier,” in IEEE BiCMOS and Compound Semi. Integ. Circuits and Technology Symp. (BCICT), 2020
[3] C. D. Cheon, M.-K. Cho, S. G. Rao, A. S. Cardoso, J. D. Connor, and J. D. Cressler, “A New Wideband, Low Insertion

  Loss SiGe Digital Step Attenuator,” in IEEE BiCMOS and Compound Semi. Integ. Circuits and Technology Symp. (BCICT), 2020
[4] M.-K. Cho, I. Song, N. E. Lourenco, A. S. Cardoso, C. T. Coen, D. R. Denison and J. D. Cressler, “A 2-20 GHz SiGe Amplitude

  Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics,” in IEEE BiCMOS and Compound Semi.

  Integ. Circuits and Technology Symp. (BCICT), 2019
[5] I. Song, J. Meang, and M.-K. Cho, “Design of RF ICs for extreme-environment applications,” in Asia-Pacific Workshop on

  Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2019

[연구과제]

2019.09 – 2020.08: A study on 4-tap finite impulse response (FIR) filter with high dynamic range and differential signal selectivity

  for the advanced wideband reconfigurable electronics and next generation space applications (National Research Foundation of Korea)

[특허]

[1] Nelson E. Lourenco, Adilson S. Cardoso, Moon-Kyu Cho, Christopher Coen, John D. Cressler, Douglas R. Denison, William B. Hunter,

  Ickhyun Song, “Transversal Radio Frequency Filter Integrated Circuit,” Mar. 18, 2019, U. S. Provisional Application (62/819,786), filed
[2] Yunyi Gong, Moon-Kyu Cho, John D. Cressler, Ickhyun Song, “A switchless bi-directional amplifier using neutralized

  common-emitter differential pair for 5G cellular application,” Mar. 22, 2018, U. S. Provisional Application (62/646,629), filed.
[3] Jeong-Geun Kim, Laurence Jeon, Moon-Kyu Cho, Yoon-Seung Hwan, “APPARATUS FOR SWITCHING FOUR WAYS”,

  Patent application number 10-2010-0099253, Republic of Korea (2010).
[4] Jeong-Geun Kim, Laurence Jeon, Moon-Kyu Cho, Yoon-Seung Hwan, “WIDE BAND BI-DIRECTIONAL DISTRIBUTED

  AMPLIFIER”, Patent application number 10-2010-0099767, Republic of Korea (2010).
[5] Jeong-Geun Kim, Laurence Jeon, Moon-Kyu Cho, Yoon-Seung Hwan, “TRUE TIME DELAY APPARATUS”, Patent

  application number 10-2010-0099252, Republic of Korea (2010).
[6] Jeong-Geun Kim, Laurence Jeon, Moon-Kyu Cho, Yoon-Seung Hwan, “APPARATUS FOR SHIFTING PHASOR BY-DIRECTIONALLY

  AND DISTRIBUTEDLY”, Patent application number 10-2010-0099357, Republic of Korea (2010).
[7] Jeong-Geun Kim, Laurence Jeon, Moon-Kyu Cho, Yoon-Seung Hwan, “MODULE FOR TRANCEIVING ON RADAR USING

  BI-DIRECTIONAL AMPLIFIER”, Patent application number 10-2010-0099948, Republic of Korea (2010).
[8] Jeong-Geun Kim, Laurence Jeon, Moon-Kyu Cho, Yoon-Seung Hwan, “APPARATUS FOR ATTENUATING DISTRIBUTEDLY

  AND BI-DIRECTIONALLY”, Patent application number 10-2010-0099358, Republic of Korea (2010).

[수상경력]

[1] “An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Paris for SET-Mitigated RF Mixers”, 2016 GEDC

  IAB Interactive Forum, Best Poster Award (Co-recipient), Apr. 2016.
[2] “A C-band Bi-directional T/R Chipset in 0.18 um CMOS Technology”, 2013 International SoC Design Conference

  (Chip Design Contest Session), Best Demo Award, Nov. 2013.
[3] “A True Time Delay Using Active Switch in 0.18 um SiGe BiCMOS”, 2013 International SoC Design Conference

  (Chip Design Contest Session), Best Poster Award (Co-recipient), Nov. 2013.
[4] “A 77GHz 4-Channel I/Q Receiver for Automotive Radar in 65 nm CMOS Technology”, the 13th Workshop on RF

  Integrated Circuit Technology, IEEE Solid-State Circuits Society Seoul Chapter, Best Paper Award, Sep. 2013.
[5] “A 0.18 um Active DPDT Switch in SiGe BiCMOS”, 2012 International SoC Design Conference (Chip Design Contest Session),

  Best Poster Award, Nov. 2012.
[6] “A 10.525 GHz Compact Motion Sensor Using a Fully Integrated Doppler Transceiver and a Patch Antenna”, the 12th

  Workshop on RF Integrated Circuit Technology, IEEE Electron Device Society Seoul Chapter, Best Paper Award (Co-recipient), Sep. 2012.
[7] “A Transformer-based CMOS I/Q Receiver for 77 GHz Automotive RADAR”, the 11th Workshop on RF Integrated Circuit

  Technology, IEEE Electron Device Society Seoul Chapter, Best Paper Award, Sep. 2011.